I. Meric, C. Dean, A. F. Young, J. Hone, P. Kim, and K. L. Shepard, “Graphene field-effect transistors based on boron nitride gate dielectrics,” International Electron Devices Meeting, 2010, pp. 23.2.1-23.2.4.

Abstract

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BNas a gate dielectric for graphene FETs.