I. Meric, C. Dean, S. J. Han, L. Wang, K. A. Jenking, J. Hone, and K. L. Shepard, “High-frequency performance of graphene field effect transistors with saturating IV-characteristics,” International Electron Devices Meeting, 2011, pp. 2.1.1-2.1.4. [ Data Download ]

Abstract

High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax values as high as 34 GHz at 600-nm channel length. Bias dependence of fT and fmax and the effect of the ambipolar channel on transconductance and output resistance are also examined.